芯动力人才计划®

    第122期国际名家讲堂

用于IGBTs和WBG功率器件的栅极驱动芯片

Gate Drive ICs for IGBTs and 

WBG Power Devices 

活动安排

时间：11月23-24日（周四至周五）

地点：厦门（具体地点详见报到通知） 

专家：Prof.吳偉東——加拿大多伦多大学教授、多伦多纳米制造中心主任

语言：全英文授课，少数内容可中英文结合，若条件允许采用中文答疑和交流。

组织单位

指导单位：工业和信息部人才交流中心、福建省科学技术协会

主办单位：芯动力人才计划®、厦门理工学院、福建省集成电路与系统科技经济融合服务平台

支持单位：厦门市集成电路行业协会、厦门火炬大学堂、海沧IC公共设计服务平台、国际半导体产业协会（SEMI China）、新微创源孵化器、上海集成电路技术与产业促进中心、摩尔精英、求是缘半导体联盟等

支持媒体：芯榜、电子创新网、科钛网等

讲堂导读

日程安排

本期摘要

Power MOSFETs, IGBTs and wide bandgap (WBG) power devices are widely used in power electronic systems. As the Si-based power device technology is reaching its theoretical performance limit, more and more efforts have been placed on the gate driver design to further improve the device performance. Recent trends for smart gate driver ICs are to integrate a variety of complex functions to provide better protection, monitoring, and local control of the switching behaviour of the power devices. This course reviews the basic gate driving requirements and a few commercially available gate driver ICs. More importantly, in-depth studies on examples of recent smart integrated gate driver ICs will be offered. In particular, smart gate driver ICs with innovative integrated features such as indirect/non-intrusive collector current sensing, on-chip CPU for digital processing, dynamic gate driving strength for EMI suppression, short circuit protection, aging detection, etc. will be covered.

本期简介

1.  Basic Gate Drive Requirements

This session begins with a review of basic gate drive requirements and the switching behavior of power MOSFETs, IGBTs, and wide bandgap (WBG) power devices such as SiC MOSFETs, and GaN HEMTs. The turn-on/off processes of a typical IGBTs will be examined with special attention on the Miller plateau, dv/dt, di/dt, and ringing oscillation. Several commercially available gate driver ICs will be used to illustrate the typical functionality and protection features. These includes gate current sourcing/sinking, external gate resistor, level shifting, dead-time control, and under voltage lockout (UVLO).

2.  Smart Gate Driver IC Design Examples

Recent trend in gate driver design includes many intelligent features such as on-chip CPU for dynamic control, flexible gate voltage levels, multi-stage driving speed for slew-rate control, precise timing control, current sensing capability for close-loop regulations, and active gate driving mode with continuous optimized dead-time. This session provides an introduction to various smart gate driver designs. The first topic focuses on IGBT gate drivers with indirect/non-intrusive collector current sensing. This is useful for both monitoring and protection of IGBTs. The second topic emphasizes the benefits of dynamic gate driving on suppressing EMI and enhancing power conversion efficiency. The final topic highlights the importance of precision timing and dead-time correction. This is especially critical for GaN and SiC power devices where the switching operation can be in the multi-MHz range, requiring pico-second resolution in the dead-time adjustment.

We expect that, after attending this short course, the audience will obtain a useful insight on basic gate driver requirements and gain exposure to future design trends in smart gate driver ICs.

报名方式

请扫描上方二维码报名

注册费用

1.线下参训

Standard：6200元/人；

Early Bird（11月12日前付款）: 5200元/人；

IC Power® Special（芯动力人才计划®合作单位 ）：5200元/人；

*芯动力人才计划®合作单位需与主办方签订相关合作协议。

2.线上参训

Standard：24800元/账号；

Early Bird（11月12日前付款）:20800 元/账号；

IC Power® Special（芯动力人才计划®合作单位 ）：20800元/账号；

*芯动力人才计划®合作单位需与主办方签订相关合作协议。

注意事项

*注册费用包含教材、午餐、茶点，其他费用（住宿、交通等）请自理。

收费方式

国信芯世纪南京信息科技有限公司是工业和信息化部人才交流中心的全资公司,负责收取注册费并开具发票，发票内容为培训费。请于2023年11月20日（周一）前将注册费汇至以下账户或扫描付款码进行付款（付款备注：第122期+单位名称+姓名）。

户   名：国信芯世纪南京信息科技有限公司

开户行：中国工商银行股份有限公司南京浦珠路支行

账   号：4301014509100090749

专家介绍

吴伟东

Wai Tung Ng

吴伟东分别于1983年、1985年和1990年在多伦多大学获得电气工程学士、硕士、博士学位。吴教授目前就职于多伦多大学电气与计算机工程系，他还是多伦多纳米制造中心（TNFC）和开放获取研究机构的主任。吴教授是功率半导体器件和智能功率集成电路领域的知名研究员。他的研究小组展示了许多世界首创的创新设计，包括具有可调整输出级的数字可重新配置DC-DC功率转换器[IISPSD 2006]、超结功率FinFET[IEDM 2010]，以及一系列用于绝缘栅双极晶体管（IGBT）和氮化镓功率晶体管的智能栅极驱动器集成电路。目前，吴教授的团队正在积极推广数字可重构栅极驱动电路，以改善GaN和碳化硅（SiC）功率晶体管的开关特性。其中包括许多新颖的功能，如一步空载校正、间接电流传感、抑制电磁干扰的动态驱动强度、智能电源模块的液冷封装等。

Wai Tung Ng (M’90, SM’04) received his B.A.Sc., M.A.Sc., and Ph.D. degrees in Electrical Engineering from the University of Toronto, in 1983, 1985 and 1990, respectively. Prof. Ng is with the Edward S. Rogers Sr. Dept. of Electrical and Computer Engineering from the University of Toronto. He is also the director for the Toronto Nanofabrication Center (TNFC), and open access research facility. Prof. Ng is a recognized researcher in the areas of power semiconductor devices and smart power integrated circuits. His research group has demonstrated many world-first innovative designs, including a digitally reconfigurable DC-DC power converter with resizable output stage [ISPSD 2006], a superjunction power FinFET [IEDM 2010], and a series of smart gate driver integrated circuits for Insulated Gate Bipolar Transistors (IGBTs) and Gallium Nitride (GaN) power transistors. Currently, Prof. Ng’s group is actively engaged in the promotion of digitally reconfigurable gate driver circuits to improve the switching characteristics of GaN and Silicon Carbide (SiC) power transistors. These include many novel features such as one-step dead-time correction, indirect current sensing, dynamic driving strength to suppress Electromagnetic Interference (EMI), liquid-cooled packaging for intelligent power modules (IPMs), etc.

国际名家讲堂系列活动剪影

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